zxtn25040dfh document number: ds33697 rev. 2 - 2 1 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh 40v npn medium power planar transistor in sot23 features and benefits ? bv ceo > 40v ? i c = 4a continuous collector current ? low saturation voltage v ce(sat) < 55mv @ 1a ? r ce(sat) = 35m ? ? h fe characterised up to 10a ? high h fe min 300 @ 1a ? 1.25w power dissipation ? 130v forward blocking voltage ? 6v reverse blocking voltage ? complementary part number zxtp25040dfh ? ?lead-free?, rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plas tic. ?green? molding compound (note 2) ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ; solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) applications ? mosfet gate drivers ? power switches ? motor control ? dc fans ? dc-dc converters ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel ZXTN25040DFHTA 1a4 7 8 3,000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at h ttps://www.diodes.com/ 3. devices with lot number starting from pid0155145 (march 2010) are ?green? products. marking information 1a4 = product type marking code sot23 device symbol top view pin configuration top view 1a4
zxtn25040dfh document number: ds33697 rev. 2 - 2 2 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 130 v collector-emitter voltage (forward blocking) v cex 130 v collector-emitter voltage v ceo 40 v emitter-collector voltage (reverse blocking) v eco 6 v emitter-base voltage v ebo 7 v continuous collector current (note 6) i c 4 a peak pulse current i cm 10 a base current i b 1 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 4) p d - 0.73 5.84 w mw/ c (note 5) 1.05 8.4 (note 6) 1.25 9.6 (note 7) 1.81 14.5 thermal resistance, junction to ambient (note 4) r ja 171 c/w (note 5) 119 (note 6) 100 (note 7) 69 thermal resistance, junction to lead (note 8) r jl 74.95 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 4. for a device surface mounted on 15mm x 15mm x 1.6mm fr4 pcb with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 2 oz copper, in still air con ditions; the device is measured when operating in a steady-state condition. 6. for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2 oz copper, in still air con ditions; the device is measured when operating in a steady-state condition. 7. as note 6 above, measured at t < 5 seconds 8. thermal resistance from junction to solder-point (at the end of the collector lead).
zxtn25040dfh document number: ds33697 rev. 2 - 2 3 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh typical thermal characteristics 0 20 40 60 80 100 120 140 1 10 100 1m 100m 1 10 10m 100m 1 10 safe operating area 50mmx50mm fr4 2oz cu single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25mmx25mm fr4 2oz cu 15mmx15mm fr4 1oz cu derating curve temperature (c) max power dissipation (w) 50mmx50mm fr4 2oz cu 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 t amb =25c 50mmx50mm fr4 2oz cu transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c 50mmx50mm fr4 2oz cu pulse power dissipation pulse width (s) maximum power (w) bv (br)cex =130v bv (br)ceo =40v failure may occur in this region t amb =25c v ce collector-emitter voltage (v) i c collector current (a)
zxtn25040dfh document number: ds33697 rev. 2 - 2 4 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo 130 170 - v i c = 100a collector-emitter breakdown voltage (forward blocking) bv cex 130 170 - v i c = 100a; r be < 1k ? or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) (note 9) bv ceo 40 63 - v i c = 10ma emitter-base breakdown voltage bv ebo 7 8.3 - v i e = 100a emitter-collector breakdown voltage (reverse blocking) bv ecx 6 7.4 - v i e = 100a; r bc < 1k ? or -0.25v < v bc < 0.25v emitter-collector breakdown voltage (base open) bv eco 6 7.4 - v i e = 100a; collector-base cut-off current i cbo - <1 - 50 20 na a v cb = 100v v cb = 100v, t a = 100c collector-emitter cut-off current i cex - - 100 na v ce = 100v; r be < 1k ? or -1v < v be < 0.25v emitter-base cut-off current i ebo - <1 50 na v eb = 5.6v on characteristics (note 9) static forward current transfer ratio h fe 300 300 30 - 450 450 60 10 900 - - - - i c = 10ma, v ce = 2v i c = 1a, v ce = 2v i c = 4a, v ce = 2v i c = 10a, v ce = 2v collector-emitter saturation voltage v ce(sat) - 45 120 135 140 55 210 210 190 mv i c = 1a, i b = 100ma i c = 1a, i b = 10ma i c = 2a, i b = 40ma i c = 4a, i b = 400ma base-emitter saturation voltage v be ( sat ) - 960 1050 mv i c = 4a, i b = 400ma base-emitter on voltage v be ( on ) - 840 950 mv i c = 4a, v ce = 2v small signal characteristics (note 9) transition frequency f t - 190 - mhz i c = 50ma, v ce = 10v, f = 100mhz collector output capacitance c obo - 11.7 20 pf v cb = 10v, f = 1mhz delay time t d - 64 - ns v cc = 10v, i c = 1a, i b1 = i b2 = 10ma rise time t r - 108 - ns storage time t s - 428 - ns fall time t f - 130 - ns notes: 9. measured under pulsed conditions. pulse width 300s. duty cycle 2%
zxtn25040dfh document number: ds33697 rev. 2 - 2 5 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh typical electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 75 150 225 300 375 450 525 600 675 750 825 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
zxtn25040dfh document number: ds33697 rev. 2 - 2 6 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh package outline dimensions e e l e1 d a c e1 l1 a1 b 3leads dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.12 - 0.044 e1 1.90 nom 0.075 nom a1 0.01 0.10 0.0004 0.004 e 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 e1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 l 0.25 0.60 0.0098 0.0236 d 2.80 3.04 0.110 0.120 l1 0.45 0.62 0.018 0.024 e 0.95 nom 0.037 nom - - - - - note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches suggested pad layout mm inches 0.8 0.031 0.9 0.035 0.95 0.037 2.0 0.079
zxtn25040dfh document number: ds33697 rev. 2 - 2 7 of 7 www.diodes.com january 2012 ? diodes incorporated a product line o f diodes incorporated zxtn25040dfh important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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